; configuration file for scmos with lamba = 1.0 (2um process) ; capm2a .00000 ; 2nd metal capacitance -- area, pf/sq-micron capm2p .00020 ; 2nd metal capacitance -- perimeter, pf/micron capma .00003 ; 1st metal capacitance -- area, pf/sq-micron capmp .00020 ; 1st metal capacitance -- perimeter, pf/micron cappa .00007 ; poly capacitance -- area, pf/sq-micron cappp .00020 ; poly capacitance -- perimeter, pf/micron capda .00030 ; n-diffusion capacitance -- area, pf/sq-micron capdp .00030 ; n-diffusion capacitance -- perimeter, pf/micron cappda .00030 ; p-diffusion capacitance -- area, pf/sq-micron cappdp .00030 ; p-diffusion capacitance -- perimeter, pf/micron capga .000816 ; gate capacitance -- area, pf/sq-micron diffext 0 ; diffusion extension for each transistor lambda 1.0 ; microns/lambda (conversion from .sim file units ; to units used in cap parameters) lowthresh 0.4 ; logic low threshold as a normalized voltage highthresh 0.6 ; logic high threshold as a normalized voltage cntpullup 0 ; irrelevant, cmos technology; no depletion transistors ; <>0 means that the capacitor formed by gate of ; pullup should be included in capacitance of output ; node diffperim 0 ; don't include diffusion perimeters for sidewall cap. ; <>0 means do not include diffusion perimeters ; that border on transistor gates when figuring ; sidewall capacitance (*) subparea 0 ; poly over transistor won't count as part pf bulk-poly cap. ; <>0 means that poly over transistor region will not ; be counted as part of the poly-bulk capacitor (*) diffext 0 ; diffusion extension for each transistor, i.e., each ; transistor is assumed to have a rectangular source ; and drain diffusion extending diffext units wide and ; transistor-width units high. The effect of the ; diffusion extension is to add some capacitance to ; the source and drain node of each transistor -- ; useful when processing the output of NET to improve ; the capacitive loading approximations without adding ; explicit load capacitors. diffext is specified in ; lambda (it will be converted using the lambda factor ; above). ;resistance channel context width length resist ; this command specifies the equivalent resistance for a transistor ; of type channel with the specified width and length. Transistors ; matching this entry will have the specified resistance; linear ; interpolation is done if the width and/or length is not matched ; exactly. ; channel is one of "enh", "dep", "intrinsic", "low-power", ; "pullup", or "p-chan" ; context is one of "static", "dynamic-high", "dynamic-low", or "power" ; width is given in lambda ; length is given in lambda ; resist is given in ohms ; n-channel resistance ;Keyword Type Context Width Length Resistance ;--------- --------- ------------ ----- ------ ---------- resistance n-channel dynamic-high 10.0 2.0 3847.0 resistance n-channel dynamic-low 10.0 2.0 1856.0 resistance n-channel static 10.0 2.0 2472.0 ; p-channel resistance resistance p-channel dynamic-high 20.0 2.0 2020.0 resistance p-channel dynamic-low 20.0 2.0 3969.0 resistance p-channel static 20.0 2.0 2011.0